FORMATION OF INTERMETALLIC PHASES AT AL-CU BILAYER THIN FILMS INTERFACES

Z. A. A. Halim* and M. A. M.Yajid

Abstract

FORMATION OF INTERMETALLIC PHASES AT AL-CU BILAYER THIN FILMS INTERFACES

1. A. A. Halim* and M. A. M.Yajid

Department of Materials, Manufacturing and Industrial Engineering, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 Skudai,Johor, MALAYSIA.

ABSTRACT

Al-Cu thin film system deposited onto a Si substrate was studied for the purpose of examining the formation and development of intermetallic phases, which were formed at the bilayer interface. The Al/Cu bilayer thin films having 2:3 thickness ratio was sequentially deposited by rf magnetron sputtering and were then annealed in argon atmosphere at 200^oC  for 60-180 minutes to promote intermetallic growth. The growth behavior of these intermetallic phases at the bilayer interfaces were studied by X-ray powder diffraction (XRD) and transmission electron microscopy (TEM). The result showed that the three major intermetallics compounds during the diffusion process were identified as Al₂Cu, AlCu+Al₃Cu₄ and Al₄Cu₉ with various lattice spacings.

Keywords: Intermetallics, Al-Cu system, Thin films, Interfaces